? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 500 v v dgr t j = 25 c to 150 c, r gs = 1m - 500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 10 a i dm t c = 25 c, pulse width limited by t jm - 30 a i a t c = 25 c - 10 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-3p,to-220 & to-247) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g ds99911c(12/12) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 500 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 10 a t j = 125 c - 250 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 1 polarp tm power mosfets p-channel enhancement mode avalanche rated ixta10p50p IXTP10P50P ixtq10p50p ixth10p50p v dss = - 500v i d25 = - 10a r ds(on) 1 to-263 aa (ixta) g s d (tab) g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-3p (ixtq) d g s d (tab) to-220ab (ixtp) d (tab) s d g features z international standard packages z avalanche rated z rugged polarp tm process z low package inductance z fast intrinsic diode advantages z easy to mount z space savings z high power density applications z high-side switches z push pull amplifiers z dc choppers z automatic test equipment z current regulators
ixta10p50p ixtq10p50p IXTP10P50P ixth10p50p ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 6.5 11 s c iss 2840 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 275 pf c rss 42 pf t d(on) 20 ns t r 28 ns t d(off) 52 ns t f 44 ns q g(on) 50 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 18 nc r thjc 0.42 c/w r thcs (to-3p & to-247) 0.25 c/w (to-220) 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 10 a i sm repetitive, pulse width limited by t jm - 40 a v sd i f = - 5a, v gs = 0v, note 1 - 3 v t rr 414 ns q rm 5.90 c i rm - 28.6 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0 .5 ? i d25 r g = 3.3 (external) i f = - 5a, -di/dt = -100a/ s v r = -100v, v gs = 0v
? 2012 ixys corporation, all rights reserved dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 to-247 (ixth) outline terminals: 1 - gate 2 - drain e ? p 1 2 3 to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline to-263 (ixta) outline ixta10p50p ixtq10p50p IXTP10P50P ixth10p50p
ixta10p50p ixtq10p50p IXTP10P50P ixth10p50p ixys reserves the right to change limits, test conditions, and dimensions. fig. 1. output characteristics @ t j = 25oc -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ t j = 25oc -26 -22 -18 -14 -10 -6 -2 -32 -28 -24 -20 -16 -12 -8 -4 0 v ds - volts i d - amperes v gs = -10v - 8v - 5 v - 6 v - 7 v fig. 3. output characteristics @ t j = 125oc -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -10a i d = - 5a fig. 5. r ds(on) normalized to i d = - 5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -26 -22 -18 -14 -10 -6 -2 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -11 -9 -7 -5 -3 -1 -50 -25 0 25 50 75 100 125 150 tc - degrees centigrade i d - amperes
? 2012 ixys corporation, all rights reserved ixta10p50p ixtq10p50p IXTP10P50P ixth10p50p fig. 7. input admittance -16 -14 -12 -10 -8 -6 -4 -2 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -30 -25 -20 -15 -10 -5 0 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = - 250v i d = - 5a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - - -- - 100ms
ixta10p50p ixtq10p50p IXTP10P50P ixth10p50p ixys reserves the right to change limits, test conditions, and dimensions. ixys ref: t_10p50p(b5)5-21-08-b fig. 13. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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